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Introducing Silicon Carbide (SiC) MOSFETs from ROHM Semiconductor, samples available from Anglia

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In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.

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This entry was posted on November 25, 2020 at 1:58 pm and is filed under News. You can follow any responses to this entry through the RSS 2.0 feed. Both comments and pings are currently closed.